| PART |
Description |
Maker |
| STB10NK60ZT4 STB10NK60Z06 STW10NK60Z STP10NK60Z ST |
N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH Power MOSFET
N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH?/a> Power MOSFET
N-channel 600V - 0.65ヘ - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH⑩ Power MOSFET
|
STMicroelectronics
|
| WTN9435 |
Surface Mount P-Channel Enhancement Mode Power MOSF ET
|
Weitron Technology
|
| 10N60Z |
10A 600V N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES
|
| STH10NK60ZFI |
N-CHANNEL 600V 0.65 OHM 10A ZENER-PROTECTED SUPERMESH POWER MOSFET
|
SGS Thomson Microelectronics
|
| STF12NK60Z STP12NK60Z F12NK60Z P12NK60Z |
N-CHANNEL 600V - 0.53 Ohm - 10A TO-220 / TO-220FP Zener-Protected SuperMESH?MOSFET
N-CHANNEL 600V - 0.53 Ohm - 10A TO-220 / TO-220FP Zener-Protected SuperMESH⑩MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STGP10NC60H06 STGP10NC60H GP10NC60H |
N-channel 10A - 600V - TO-220 Very fast PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGP10NB60S 6208 |
N-CHANNEL 10A - 600V TO-220 PowerMESH IGBT
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STGP10N60 STGP10N60L 6209 |
25 A, 600 V, N-CHANNEL IGBT, TO-220AB
From old datasheet system
N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
